Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon
Phys Rev B Condens Matter
.
1996 Nov 1;54(17):11853-11856.
doi: 10.1103/physrevb.54.11853.
Authors
LP Biró
,
J Gyulai
,
K Havancsak
,
AY Didyk
,
S Bogen
,
L Frey
PMID:
9985013
DOI:
10.1103/physrevb.54.11853
No abstract available