Molecular-dynamics simulations of SiH3 radical deposition on hydrogen-terminated silicon (100) surfaces
Phys Rev B Condens Matter
.
1995 Sep 15;52(11):8283-8287.
doi: 10.1103/physrevb.52.8283.
Authors
T Ohira
,
O Ukai
,
T Adachi
,
Y Takeuchi
,
M Murata
PMID:
9979828
DOI:
10.1103/physrevb.52.8283
No abstract available