Bismuth ferrite BiFeO3 (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions Bi0.9La0.1(Fe1-xMnx)O3 (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol-gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap Eg was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J-V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (Voc) and the short circuit current density (Jsc) with Voc = 90.2 mV and Jsc = 6.90 μA/cm2 for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both Voc and Jsc, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface.
Keywords: bismuth ferrite; charge transport layers; doping; photovoltaic.