Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display

Hongjin Li; Yifeng Feng; Meiyi Zhu; Yun Gao; Chao Fan; Qiaopeng Cui; Qiuting Cai; Ke Yang; Haiping He; Xingliang Dai; Jingyun Huang; Zhizhen Ye

doi:10.1038/s41565-024-01652-y

Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display

Nat Nanotechnol. 2024 Apr 22. doi: 10.1038/s41565-024-01652-y. Online ahead of print.

Authors

Hongjin Li¹, Yifeng Feng¹, Meiyi Zhu^{1

2}, Yun Gao¹, Chao Fan^{1

2}, Qiaopeng Cui¹, Qiuting Cai¹, Ke Yang³, Haiping He^{1

2}, Xingliang Dai^{4

5

6}, Jingyun Huang^{7

8}, Zhizhen Ye^{9

10

11}

Affiliations

¹ School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
² Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China.
³ Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
⁴ School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. shanfeng@zju.edu.cn.
⁵ Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China. shanfeng@zju.edu.cn.
⁶ Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, People's Republic of China. shanfeng@zju.edu.cn.
⁷ School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. huangjy@zju.edu.cn.
⁸ Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China. huangjy@zju.edu.cn.
⁹ School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. yezz@zju.edu.cn.
¹⁰ Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, People's Republic of China. yezz@zju.edu.cn.
¹¹ Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, People's Republic of China. yezz@zju.edu.cn.

PMID: 38649747
DOI: 10.1038/s41565-024-01652-y

Abstract

Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI₃ QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m^-2, marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m^-2. This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.

Abstract

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