Calculating and analyzing time delay in zigzag graphene nanoscrolls based complementary metal-oxide-semiconductors

Ali Sadeqian; Mohammad Taghi Ahmadi; Morteza Bodaghzadeh; Amir Musa Abazari

doi:10.1038/s41598-024-58593-8

Calculating and analyzing time delay in zigzag graphene nanoscrolls based complementary metal-oxide-semiconductors

Sci Rep. 2024 Apr 19;14(1):9009. doi: 10.1038/s41598-024-58593-8.

Authors

Ali Sadeqian¹, Mohammad Taghi Ahmadi², Morteza Bodaghzadeh¹, Amir Musa Abazari³

Affiliations

¹ Nanotechnology Research Center, Nanoelectronics Group, Physics Department, Urmia University, Urmia, 57147, Iran.
² Nanotechnology Research Center, Nanoelectronics Group, Physics Department, Urmia University, Urmia, 57147, Iran. mt.ahmadi@urmia.ac.ir.
³ Department of Mechanical Engineering, Faculty of Engineering, Urmia University, Urmia, Iran. am.abazari@urmia.ac.ir.

PMID: 38637607
DOI: 10.1038/s41598-024-58593-8

Abstract

Graphene Nano Scrolls (GNSs) and Zigzag graphene nanoscrolls (ZGNSs) are semi-one-dimensional materials with exceptional electrical and optical properties, making them attractive to be used in nanoelectronics and complementary metal-oxide-semiconductor (CMOS) technology. With in CMOS device technology, time delay is a crucial issue in the design and implementation of CMOS based ZGNSs. Current paper focus is on ZGNSs application in the channel area of metal-oxide-semiconductor field-effect transistors (MOSFETs) in CMOS technology. We studied analytically, the importance of different parameters on time delay reduction, resulting in faster switching and higher frequency in integrated circuits (ICs). The results of this research demonstrates that, the ZGNS-based CMOS proves considerable variations in the current due to the geometrical parameters, such as chirality number, channel length, and nanoscroll length which can be engineered to produce faster ICs.

Keywords: Carrier mobility; Current–voltage characteristic; FET; Graphene nanoscroll; Time delay.