Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

Sun Woo Kim; Juhyung Seo; Subin Lee; Daozhi Shen; Youngjin Kim; Hyun Ho Choi; Hocheon Yoo; Hyun Ho Kim

doi:10.1021/acsami.4c01627

Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

ACS Appl Mater Interfaces. 2024 May 1;16(17):22131-22138. doi: 10.1021/acsami.4c01627. Epub 2024 Apr 17.

Authors

Sun Woo Kim^{1

2}, Juhyung Seo³, Subin Lee³, Daozhi Shen⁴, Youngjin Kim⁵, Hyun Ho Choi⁵, Hocheon Yoo³, Hyun Ho Kim^{1

2}

Affiliations

¹ School of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea.
² Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi 39177, Korea.
³ Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea.
⁴ School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
⁵ Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Korea.

PMID: 38632927
DOI: 10.1021/acsami.4c01627

Abstract

Due to the increasing complexity in miniaturization of electronic devices, reconfigurable field-effect transistors (RFETs) have emerged as a solution. Although the foundational concepts of RFETs have matured over two decades, ongoing breakthroughs are needed to address challenges such as improving the device performance as well as achieving balanced symmetry between n-type and p-type transport modes with long-term stability. Herein, we present a nonvolatile WSe₂-based RFET that utilizes photoassisted interfacial charge trapping at the h-BN and SiO₂ interface. Unlike typical RFETs with two gate electrodes, our RFETs achieved polarity control with a single operating gate activated exclusively under white-light exposure. The threshold voltage was tunable, ranging from 27.4 (-31.6 V) to 0.9 (+19.5 V), allowing selective activation of n-type (p-type) operation at V_GS = 0 V. Additionally, our WSe₂-based RFETs show superior repeatability and long-term stability. Leveraging these advantages, various reconfigurable logic circuits were successfully demonstrated, including complementary inverters and switch circuits as well as pull-up and pull-down circuits, highlighting the potential of WSe₂ FETs for future advancements of integrated circuits.

Keywords: photoinduced doping; reconfigurable field-effect transistors; reconfigurable logic devices; transition metal dichalcogenides; van der Waals gap.