Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

Liang Yu; Xinyue Liu; Meifei Chen; Junhao Peng; Ting Xu; Wei Gao; Mengmeng Yang; Chun Du; Jiandong Yao; Wei Song; Huafeng Dong; Jingbo Li; Zhaoqiang Zheng

doi:10.1021/acsami.4c03191

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

ACS Appl Mater Interfaces. 2024 May 1;16(17):22207-22216. doi: 10.1021/acsami.4c03191. Epub 2024 Apr 17.

Authors

Liang Yu^{1

2}, Xinyue Liu³, Meifei Chen¹, Junhao Peng², Ting Xu⁴, Wei Gao⁵, Mengmeng Yang⁵, Chun Du⁶, Jiandong Yao⁷, Wei Song⁸, Huafeng Dong², Jingbo Li⁹, Zhaoqiang Zheng¹

Affiliations

¹ Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China.
² School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China.
³ Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, P. R. China.
⁴ School of Material Science & Engineering, Shaanxi University of Science & Technology, Xi'an 710021, P. R. China.
⁵ School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P.R. China.
⁶ Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communication, Institute of Photonics Technology, Jinan University, Guangzhou 510632, P. R. China.
⁷ State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
⁸ Analysis and Test Center, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China.
⁹ College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, P. R. China.

PMID: 38629723
DOI: 10.1021/acsami.4c03191

Abstract

Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe₂ heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 10¹⁴ Jones, light on/off ratio of 1.2 × 10⁶, and rise/fall time of 112.4/426.8 μs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe₂, WS₂, and MoS₂. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.

Keywords: 2D GaSe; interfacial engineering; photodetector; photogating effect; van der Waals heterojunction.