Enhanced thermal conductivity of epoxy resin by incorporating three-dimensional boron nitride thermally conductive network

Xubin Wang; Changhai Zhang; Tiandong Zhang; Chao Tang; Qingguo Chi

doi:10.1063/5.0205196

Enhanced thermal conductivity of epoxy resin by incorporating three-dimensional boron nitride thermally conductive network

J Chem Phys. 2024 Apr 21;160(15):154903. doi: 10.1063/5.0205196.

Authors

Xubin Wang^{1

2}, Changhai Zhang^{1

2}, Tiandong Zhang^{1

2}, Chao Tang^{1

2}, Qingguo Chi^{1

2}

Affiliations

¹ Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150080, People's Republic of China.
² School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, People's Republic of China.

PMID: 38624129
DOI: 10.1063/5.0205196

Abstract

Packaging insulation materials with high thermal conductivity and excellent dielectric properties are favorable to meet the high demand and rapid development of third generation power semiconductors. In this study, we propose to improve the thermal conductivity of epoxy resin (EP) by incorporating a three-dimensional boron nitride thermally conductive network. Detailedly, polyurethane foam (PU) was used as a supporter, and boron nitride nanosheets (BNNSs) were loaded onto the PU supporter through chemical bonding (BNNS@PU). After immersing BNNS@PU into the EP resin, EP-based thermally conductive composites were prepared by vacuum-assisted impregnation. Fourier transform infrared spectrometer and scanning electron microscope were used to characterize the chemical bonding and morphological structure of BNNS@PU, respectively. The content of BNNS in BNNS@PU/EP composites was quantitatively analyzed by TGA. The results show that the thermal conductivity of the BNNS@PU/EP composites reaches 0.521 W/m K with an enhancement rate η of 30.89 at an ultra-low BNNS filler content (5.93 wt. %). Additionally, the BNNS@PU/EP composites have excellent dielectric properties with the frequency range from 101 to 106 Hz. This paper provides an interesting idea for developing high thermal conductivity insulating materials used for power semiconductor packaging.