Group III-nitride semiconductors with tubular structures offer significant potential across various applications, including optics, electronics, and chemical sensors. However, achieving tailored fabrication of these structures remains a challenge. In this study, we present a novel, to the best of our knowledge, method to fabricate micro-sized tubular structures by rolling the layered membrane of group III-nitride alloys utilizing the photoelectrochemical (PEC) etching. To customize the geometry of the tubular structure, we conducted an analytic calculation to predict the strain and deformation for the layered membrane. Based on the calculations, we designed and fabricated an AlGaN/GaN/InGaN/n-GaN/ sapphire structure using metal-organic chemical vapor deposition (MOCVD). Photolithography and PEC etching were employed to selectively etch the sacrificial InGaN layer. We investigated the changes of optical properties of the rolled-up structure by utilizing micro-photoluminescence (µ-PL) and micro-Raman spectroscopy.