Copper metal catalyst seeds have recently triggered much research interest for the development of low-cost and high-performance metallic catalysts with industrial applications. Herein, we present metallic Cu catalyst seeds deposited by an atomic layer deposition method on polymer substrates. The atomic layer deposited Cu (ALD-Cu) can ideally substitute noble metals Ag, Au, and Pd to catalyze Cu electroless deposition. The optimized deposition temperature and growth cycles of an ALD-Cu catalyzed seed layer have been obtained to achieve a flexible printed circuit (FPC) with a high performance electroless plating deposited Cu (ELD-Cu) film. The ELD-Cu films on the ALD-Cu catalyst seeds grown display a uniform and dense deposition with a low resistivity of 1.74 μΩ·cm, even in the through via and trench of substates. Furthermore, the ALD-Cu-catalyzed ELD-Cu circuits and LED devices fabricated on treated PI also demonstrate excellent conductive and mechanical features. The remarkable conductive and mechanical characteristics of the ALD-Cu seed catalyzed ELD-Cu process demonstrate its tremendous potential in high-density integrated FPC applications.
Keywords: Cu catalyst seeds; atomic layer deposition copper; copper printed circuits; electroless plating.