Passivation of Sodium Benzenesulfonate at the Buried Interface of a High-Performance Wide-Bandgap Perovskite Solar Cell

Sijia La; Yaqi Mo; Xing Li; Xuzheng Feng; Xianggang Chen; Zhuoxin Li; Miao Yang; Dongxu Ren; Shuyi Liu; Xiaoxia Cui; Jieqiong Chen; Zhao Zhang; Zhengbo Yuan; Molang Cai

doi:10.3390/ma17071532

Passivation of Sodium Benzenesulfonate at the Buried Interface of a High-Performance Wide-Bandgap Perovskite Solar Cell

Materials (Basel). 2024 Mar 27;17(7):1532. doi: 10.3390/ma17071532.

Authors

Sijia La¹, Yaqi Mo¹, Xing Li², Xuzheng Feng¹, Xianggang Chen¹, Zhuoxin Li¹, Miao Yang¹, Dongxu Ren¹, Shuyi Liu¹, Xiaoxia Cui¹, Jieqiong Chen¹, Zhao Zhang¹, Zhengbo Yuan¹, Molang Cai¹

Affiliations

¹ State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China.
² Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Abstract

The phase segregation of wide-bandgap perovskite is detrimental to a device's performance. We find that Sodium Benzenesulfonate (SBS) can improve the interface passivation of PTAA, thus addressing the poor wettability issue of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine](PTAA). This improvement helps mitigate interface defects caused by poor contact between the perovskite and PTAA, reducing non-radiative recombination. Additionally, enhanced interface contact improves the crystallinity of the perovskite, leading to higher-quality perovskite films. By synergistically controlling the crystallization and trap passivation to reduce the phase segregation, SBS-modified perovskite solar cells (PSCs) achieved a power conversion efficiency (PCE) of 20.27%, with an open-circuit voltage (V_oc) of 1.18 V, short-circuit current density (J_sc) of 20.93 mA cm^-2, and fill factor (FF) of 82.31%.

Keywords: buried interface; interface passivation; inverted wide-bandgap perovskite solar cells.

Abstract

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