Remote temperature sensing in microelectronics: optical thermometry using dual-center phosphors

Mikhail A Kurochkin; Daria V Mamonova; Vassily A Medvedev; Evgenii Yu Kolesnikov; Ilya E Kolesnikov

doi:10.1088/1361-6528/ad3d61

Remote temperature sensing in microelectronics: optical thermometry using dual-center phosphors

Nanotechnology. 2024 Apr 30;35(29). doi: 10.1088/1361-6528/ad3d61.

Authors

Mikhail A Kurochkin¹, Daria V Mamonova¹, Vassily A Medvedev¹, Evgenii Yu Kolesnikov², Ilya E Kolesnikov¹

Affiliations

¹ St. Petersburg State University, Universitetskaya nab. 7-9, 199034, St. Petersburg, Russia.
² Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya str. 29, 195251, St. Petersburg, Russia.

PMID: 38604136
DOI: 10.1088/1361-6528/ad3d61

Abstract

Remote thermal sensing has emerged as a temperature detection technique for tasks in which standard contact thermometers cannot be used due to environment or dimension limitations. One of such challenging tasks is the measurement of temperature in microelectronics. Here, optical thermometry using co-doped and mixed dual-center Gd₂O₃:Tb³⁺/Eu³⁺samples were realized. Ratiometric approach based on monitoring emission intensities of Tb³⁺(⁵D₄-⁷F₅) and Eu³⁺(⁵D₀-⁷F₂) transition provided sensing in the range of 30 °C-80 °C. Dispersion system type only slightly affected relative sensitivity, accuracy and precision. The applicability of phosphors synthesized to be utilized as remote optical thermometers for microelectronics has been proved with an example on a surface mount resistor and microcontroller.

Keywords: dual-center; lanthanides; microelectronics; optical thermometry; ratiometric sensing.