Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Hyojoo Heo; Yunwoo Shin; Jaemin Son; Seungho Ryu; Kyoungah Cho; Sangsig Kim

doi:10.1088/1361-6528/ad3b04

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Nanotechnology. 2024 Apr 23;35(27). doi: 10.1088/1361-6528/ad3b04.

Authors

Hyojoo Heo¹, Yunwoo Shin¹, Jaemin Son¹, Seungho Ryu², Kyoungah Cho¹, Sangsig Kim^{1

2}

Affiliations

¹ Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
² Department of Semiconductor System Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

PMID: 38579689
DOI: 10.1088/1361-6528/ad3b04

Abstract

In this study, we investigate the gate-bias stability of triple-gated feedback field-effect transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) of FBFETs increases from 0.3 mV dec^-1to 60 and 80 mV dec^-1inp- andn-channel modes, respectively, when a positive bias stress (PBS) is applied for 1000 s. In contrast, the SS value does not change even after a negative bias stress (NBS) is applied for 1000 s. The difference in the switching characteristics under PBS and NBS is attributed to the ability of the interface traps to readily gain electrons from the inversion layer. The switching characteristics deteriorated by PBS are completely recovered after annealing at 300 °C for 10 min, and the characteristics remain stable even after PBS is applied again for 1000 s.

Keywords: annealing; bias stress; feedback field-effect transistors; interface trap; silicon nanosheet.