The growth mechanism of PtS2 single crystal

Huachao Wang; Jisheng Zhang; Guowen Su; Jiangwei Lu; Yanfen Wan; Xiaohua Yu; Peng Yang

doi:10.1063/5.0201654

The growth mechanism of PtS2 single crystal

J Chem Phys. 2024 Apr 7;160(13):134703. doi: 10.1063/5.0201654.

Authors

Huachao Wang¹, Jisheng Zhang¹, Guowen Su¹, Jiangwei Lu², Yanfen Wan¹, Xiaohua Yu³, Peng Yang¹

Affiliations

¹ National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China.
² Kunming Institute of Physics, Kunming 650223, People's Republic of China.
³ Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China.

PMID: 38577980
DOI: 10.1063/5.0201654

Abstract

PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1-2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals.