Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed

Ning Cao; Lichun Zhang; Xin Li; Ruhan Luan; Chuanlong Sun; Jiangang Yu; Taiping Lu; Yadan Zhu; Doudou Liang; Fengzhou Zhao

doi:10.1364/OE.520649

Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed

Opt Express. 2024 Mar 25;32(7):11573-11582. doi: 10.1364/OE.520649.

Authors

Ning Cao, Lichun Zhang, Xin Li, Ruhan Luan, Chuanlong Sun, Jiangang Yu, Taiping Lu, Yadan Zhu, Doudou Liang, Fengzhou Zhao

PMID: 38571001
DOI: 10.1364/OE.520649

Abstract

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa₂O₄ has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.75 mA/W and 1.10 × 10¹¹ Jones at 0 V. The photodetector exhibits high repeatability and stability under 260 nm periodic illumination. The response and recovery time are 205 ms and 133 ms, respectively. This work provides an effective strategy for fabricating high-performance self-powered DUV photodetectors.