Study of the in situ test setup and analysis methods for self-healing properties of metallized film capacitors

Shaopeng Zhou; Deping Chen; Baoyu Du; Pan Wang; Xiucai Wang; Wenbo Zhu; Si Liu; Peng Xiao; Jianwen Chen

doi:10.1063/5.0194057

Study of the in situ test setup and analysis methods for self-healing properties of metallized film capacitors

Rev Sci Instrum. 2024 Apr 1;95(4):045105. doi: 10.1063/5.0194057.

Authors

Shaopeng Zhou¹, Deping Chen², Baoyu Du³, Pan Wang³, Xiucai Wang⁴, Wenbo Zhu⁵, Si Liu⁶, Peng Xiao⁶, Jianwen Chen¹

Affiliations

¹ School of Electronic and Information Engineering, Foshan University, Foshan 528000, China.
² School of Materials and Environmental Engineering, Chengdu Technological University, Chengdu 611730, China.
³ Sheng Ye Electric Co., Ltd., Foshan 528300, China.
⁴ School of Materials Science and Hydrogen Energy, Foshan University, Foshan 528000, China.
⁵ School of Mechatronic Engineering and Automation, Foshan University, Foshan 528000, China.
⁶ School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China.

PMID: 38563717
DOI: 10.1063/5.0194057

Abstract

Metallized film capacitors (MFCs) are widely used in the power electronics industry due to their unique self-healing (SH) capability. SH performance is an essential assessment for MFC reliability verification in industrial production. The SH phenomenon of metallized films usually occurs rapidly in a very short period, and its real-time evolution details are often difficult to capture and analyze. In this paper, a test system for the SH performance of metallized films for capacitors was constructed. The system consists of three components: a voltage-current characteristic testing and current pulse capture device, a microscopic image real-time acquisition device, and an integrated analysis processing device. Through the voltage-current characteristic testing and current pulse capture device, the electrical parameters of the SH point, such as SH times, breakdown field strength, SH current, and SH energy, are obtained; through a microscopic image real-time acquisition device, the real-time spatial positioning of the SH point was obtained, and the interconnection between the morphology of the SH point and the electrical properties was established. The relationship between the SH point and the temperature distribution was further established using thermal imaging technology, which lays the foundation for a thorough and timely assessment and analysis of the failure mechanism and the real-time evolution of the metallized film SH process. This significantly improves the effectiveness of SH property research.