Inkjet printed IGZO memristors with volatile and non-volatile switching

Miguel Franco; Asal Kiazadeh; Jonas Deuermeier; S Lanceros-Méndez; Rodrigo Martins; Emanuel Carlos

doi:10.1038/s41598-024-58228-y

Inkjet printed IGZO memristors with volatile and non-volatile switching

Sci Rep. 2024 Mar 29;14(1):7469. doi: 10.1038/s41598-024-58228-y.

Authors

Miguel Franco^{1

2}, Asal Kiazadeh³, Jonas Deuermeier², S Lanceros-Méndez^{1

4

5}, Rodrigo Martins², Emanuel Carlos⁶

Affiliations

¹ Center of Physics, University of Minho and Laboratory of Physics for Materials and Emergent Technologies, LapMET, Campus de Gualtar, 4710-057, Braga, Portugal.
² CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal.
³ CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal. a.kiazadeh@fct.unl.pt.
⁴ BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, 48940, Leioa, Spain.
⁵ IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Spain.
⁶ CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal. e.carlos@fct.unl.pt.

Abstract

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 10⁵ s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth < - 0.65 V) and a characteristic time (τ) of 0.75 ± 0.12 ms when a single pulse of - 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications.

Keywords: IGZO; Inkjet printing; Memristor; Printed electronics; Volatile and non-volatile behavior.