Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Fu-He Hsiao; Wen-Chien Miao; Tzu-Yi Lee; Yi-Hua Pai; Yu-Ying Hung; Daisuke Iida; Chun-Liang Lin; Chi-Wai Chow; Gong-Ru Lin; Kazuhiro Ohkawa; Hao-Chung Kuo; Yu-Heng Hong

doi:10.1038/s41598-024-57132-9

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Sci Rep. 2024 Mar 25;14(1):7018. doi: 10.1038/s41598-024-57132-9.

Authors

Fu-He Hsiao^{1

2}, Wen-Chien Miao^{1

2}, Tzu-Yi Lee³, Yi-Hua Pai³, Yu-Ying Hung^{1

3}, Daisuke Iida⁴, Chun-Liang Lin², Chi-Wai Chow³, Gong-Ru Lin⁵, Kazuhiro Ohkawa⁶, Hao-Chung Kuo^{7

8}, Yu-Heng Hong⁹

Affiliations

¹ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan.
² Department of Electrophysics, College of Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
³ Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
⁴ Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), 23955 6900, Thuwal, Saudi Arabia.
⁵ Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan.
⁶ Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), 23955 6900, Thuwal, Saudi Arabia. Kazuhiro.ohkawa@kaust.edu.sa.
⁷ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. hckuo0206@nycu.edu.tw.
⁸ Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan. hckuo0206@nycu.edu.tw.
⁹ Semiconductor Research Center, Hon Hai Research Institute, Taipei, 11492, Taiwan. enoch.yh.hong@foxconn.com.

Abstract

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on-off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.