Spatiotemporal evolution of ultrafast photocarrier dynamics across WS2-ReS2 lateral interface

Qiannan Cui; Yuanyuan Li; He Zhang; Jianhua Chang; Hua Xu; Chunxiang Xu

doi:10.1063/5.0198494

Spatiotemporal evolution of ultrafast photocarrier dynamics across WS2-ReS2 lateral interface

J Chem Phys. 2024 Mar 28;160(12):124704. doi: 10.1063/5.0198494.

Authors

Qiannan Cui¹, Yuanyuan Li², He Zhang¹, Jianhua Chang², Hua Xu³, Chunxiang Xu¹

Affiliations

¹ School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
² School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China.
³ Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China.

PMID: 38526112
DOI: 10.1063/5.0198494

Abstract

2D lateral heterostructures possess atomically sharp lateral interfaces, while understanding of their ultrafast photocarrier dynamics from a spatiotemporal viewpoint is rather elusive. In this study, we have investigated the spatiotemporal evolution of photocarrier dynamics across the 1D lateral interface of a WS2-ReS2 2D lateral heterostructure utilizing femtosecond laser pump-probe. The nontrivial band offset across the 1D lateral interface markedly mediates the spatiotemporal photocarrier transfer and transport processes. Subsequently, a hole accumulation region on the WS2 side and an electron accumulation region (1DEG) on the ReS2 side have been spatially identified by correlating ultrafast photocarrier signals. The measured width of the unilateral depletion region is 1360 ± 160 nm. Our work has provided substantial insights into mediated photocarrier dynamics in the 2D lateral heterostructure, which will benefit explorations in 2D interfacial physics and 2D lateral optoelectronic devices.