High-Pressure Synthesis of Semiconducting PbCu3Mn4O12 with Near-Room-Temperature Ferrimagnetic Order

Haoting Zhao; Dabiao Lu; Xiao Wang; Xubin Ye; Jie Zhang; Maocai Pi; Zhao Pan; Yi-Ying Chin; Chien-Te Chen; Zhiwei Hu; Youwen Long

doi:10.1021/acs.inorgchem.3c04493

High-Pressure Synthesis of Semiconducting PbCu₃Mn₄O₁₂ with Near-Room-Temperature Ferrimagnetic Order

Inorg Chem. 2024 Apr 1;63(13):5924-5930. doi: 10.1021/acs.inorgchem.3c04493. Epub 2024 Mar 21.

Authors

Haoting Zhao^{1

2}, Dabiao Lu^{1

3}, Xiao Wang¹, Xubin Ye¹, Jie Zhang^{1

3}, Maocai Pi^{1

3}, Zhao Pan¹, Yi-Ying Chin⁴, Chien-Te Chen⁵, Zhiwei Hu⁶, Youwen Long^{1

3

7}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
² College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
³ School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
⁴ Department of Physics, National Chung Cheng University, Chiayi 621301, Taiwan.
⁵ National Synchrotron Radiation Research Center (NSRRC), 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 300092, Taiwan.
⁶ Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden 01187, Germany.
⁷ Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.

PMID: 38511934
DOI: 10.1021/acs.inorgchem.3c04493

Abstract

A transition-metal oxide of PbCu₃Mn₄O₁₂ was prepared at 1523 K and 10 GPa. An A-site-ordered quadruple perovskite structure with the space group Im3̅ is assigned for this compound. Based on bond-valence-sum calculations and X-ray absorption spectroscopy, the charge combination is determined to be PbCu₃²⁺Mn₄⁴⁺O₁₂. Due to Cu²⁺(↑)-Mn⁴⁺(↓) antiferromagnetic coupling, a near-room-temperature ferrimagnetic phase transition is observed at approximately 287 K. PbCu₃Mn₄O₁₂ exhibits a semiconducting electric transport property with the energy band gap E_g ≈ 0.2 eV. In addition, considerable low-field magnetoresistance effects are observed at lower temperatures. This study provides an intrinsic near-room-temperature ferrimagnetic semiconductor that exhibits potential applications in next-generation spintronic devices.