High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe2 /SnSe2 van der Waals Heterojunction

Yuan Pan; Tao Zheng; Feng Gao; Ligan Qi; Wei Gao; Jielian Zhang; Ling Li; Kang An; Huaimin Gu; Hongyu Chen

doi:10.1002/smll.202311606

High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe₂ /SnSe₂ van der Waals Heterojunction

Small. 2024 Mar 18:e2311606. doi: 10.1002/smll.202311606. Online ahead of print.

Authors

Yuan Pan^{1

2}, Tao Zheng^{1

2}, Feng Gao³, Ligan Qi^{1

2}, Wei Gao^{1

2}, Jielian Zhang^{1

2}, Ling Li^{1

2}, Kang An^{1

2}, Huaimin Gu^{1

2}, Hongyu Chen^{1

2}

Affiliations

¹ Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
² Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China.
³ Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, P. R. China.

PMID: 38497093
DOI: 10.1002/smll.202311606

Abstract

Novel 2D materials with low-symmetry structures exhibit great potential applications in developing monolithic polarization-sensitive photodetectors with small volume. However, owing to the fact that at least half of them presented a small anisotropic factor of ≈2, comprehensive performance of present polarization-sensitive photodetectors based on 2D materials is still lower than the practical application requirements. Herein, a self-driven photodetector with high polarization sensitivity using a broken-gap ReSe₂ /SnSe₂ van der Waals heterojunction (vdWH) is demonstrated. Anisotropic ratio of the photocurrent (I_max /I_min ) could reach 12.26 (635 nm, 179 mW cm^-2 ). Furthermore, after a facile combination of the ReSe₂ /SnSe₂ device with multilayer graphene (MLG), I_max /I_min of the MLG/ReSe₂ /SnSe₂ can be further increased up to13.27, which is 4 times more than that of pristine ReSe₂ photodetector (3.1) and other 2D material photodetectors even at a bias voltage. Additionally, benefitting from the synergistic effect of unilateral depletion and photoinduced tunneling mechanism, the MLG/ReSe₂ /SnSe₂ device exhibits a fast response speed (752/928 µs) and an ultrahigh light on/off ratio (10⁵ ). More importantly, MLG/ReSe₂ /SnSe₂ device exhibits excellent potential applications in polarized imaging and polarization-coded optical communication with quaternary logic state without any power supply. This work provides a novel feasible avenue for constructing next-generation smart polarization-sensitive photodetector with low energy consumption.

Keywords: ReSe2; broken-gap; optical communication; polarization-sensitive photodetector; self-driven.

Abstract

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