Dielectric engineered graphene transistors for high-performance near-infrared photodetection

Weijian Zhou; Tieying Ma; Ye Tian; Yixin Jiang; Xuechao Yu

doi:10.1016/j.isci.2024.109314

Dielectric engineered graphene transistors for high-performance near-infrared photodetection

iScience. 2024 Feb 23;27(3):109314. doi: 10.1016/j.isci.2024.109314. eCollection 2024 Mar 15.

Authors

Weijian Zhou¹, Tieying Ma¹, Ye Tian², Yixin Jiang¹, Xuechao Yu²

Affiliations

¹ College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310013, China.
² Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China.

Abstract

Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we report carrier mobility enhancement of graphene dielectric engineering. Through the fabrication of devices utilizing Si/SiO₂/Al₂O₃/graphene layers and subsequent electrical characterization, our findings illustrate the navigable nature of the Al₂O₃ dielectric layer is navigable for reducing the SiO₂ phonon scattering and increasing graphene's carrier mobility by up to ∼8000 cm²V^-1s^-1. Furthermore, the improvement in carrier mobility of graphene has been utilized in the hybrid near-infrared photodetector, resulting in outstanding responsivity of ∼400 AW^-1, detectivity of ∼2.2 ✕ 10¹¹ Jones in the graphene/Ag₂Te detector. Our study establishes pathways for the seamless integration of graphene or other 2D materials within the standard CMOS processes, thereby facilitating the fabrication of advanced optoelectronic devices.

Keywords: Devices; Materials property.