An electron transport layer (ETL) with a suitable gradient energy level can enhance electron transfer, suppress carrier recombination, and effectively improve the photoresponse of photodetectors (PDs). In this letter, a series of ITO/ZnO/CdS/MAPbI3/Spiro-OMeTAD heterojunction PDs were prepared by incorporating a ZnO layer at the CdS/ITO interface upon varying the thickness from 0 to 95 nm. The optimized band arrangement in the PD results in an excellent self-powering ability and improved photoresponse. Moreover, both the photovoltaic and pyroelectric responses strongly correlate with the thickness of the ZnO layer. The PD with an optimal ZnO thin film thickness of 50 nm achieves a huge responsivity (R) of 1.19 × 104 V/W and detectivity (D) of 2.22 × 109 Jones, primarily due to the strengthened pyro-phototronic effects enabled by the dual ETL layers. In addition, the enhanced pyroelectric effect broadens the spectral range of the PD to 360-1550 nm, largely surpassing the band gap of the heterojunction.