Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Meizhuang Liu; Jian Gou; Zizhao Liu; Zuxin Chen; Yuliang Ye; Jing Xu; Xiaozhi Xu; Dingyong Zhong; Goki Eda; Andrew T S Wee

doi:10.1038/s41467-024-46087-0

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe₂

Nat Commun. 2024 Feb 26;15(1):1765. doi: 10.1038/s41467-024-46087-0.

Authors

Meizhuang Liu^{1

2}, Jian Gou^{3

4}, Zizhao Liu⁵, Zuxin Chen⁶, Yuliang Ye⁶, Jing Xu⁶, Xiaozhi Xu⁷, Dingyong Zhong⁵, Goki Eda³, Andrew T S Wee⁸

Affiliations

¹ School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China. mzliu@m.scnu.edu.cn.
² Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore. mzliu@m.scnu.edu.cn.
³ Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
⁴ School of Physics, Zhejiang University, Hangzhou, 310027, China.
⁵ School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, China.
⁶ School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, China.
⁷ School of Physics, Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China.
⁸ Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore. phyweets@nus.edu.sg.

Abstract

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe₂. The lattice-matched MoSe₂ nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe₂ with the formation of MoSe₂-CrSe₂ heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe₂ monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe₂ exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Abstract

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