Weld-free mounting of lamellae for electrical biasing operando TEM

Abstract

Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials and devices. The ability to perform electrical testing while simultaneously capturing the wide spectrum of signals detectable in a TEM, including structural, chemical, and even electronic contrast, represents a significant milestone in the realm of nanoelectronics. In situ studies hold particular promise for the development of Metal-Insulator-Metal (MIM) devices for use in next-generation computing. However, achieving successful device operation in the TEM typically necessitates meticulous sample preparation involving focused ion beam (FIB) systems. Conducting contamination introduced during the FIB thinning process and subsequent attachment of the sample onto a MEMS-based chip remains a formidable challenge. This article delineates an improved FIB-based sample preparation methodology that results in good electrical connectivity and operational functionality across various MIM devices. To exemplify the efficacy of the sample preparation technique, we demonstrate preparation of a clean cross section extracted from a Au/Pt/BaSrTiO₃/SrMoO₃ tunable capacitor (varactor). The FIB-prepared TEM lamella mounted on a MEMS-based chip showed current levels in the tens of picoamperes range at 0.1 V. Furthermore, the electric response and current density of the TEM lamella device closely align with macro-scale devices. These samples exhibit comparable current densities to their macro-sized counterparts thus validating the sample preparation process and confirming device connectivity. The simultaneous operation and TEM characterization of electronic devices enabled by this process enables direct correlation between device structure and function, which could prove pivotal in the development of new MIM systems.

Keywords: FIB-based sample preparation; In situ TEM biasing; MEMS-based chips; MIM devices.