Concern for the environment is one of the main factors that are increasing the demand for compact and energy-efficient electronic devices. Recent research has made advances in reducing the power consumption of field-effect transistors, including the use of high-dielectric insulators, low-voltage operation, and selective power-conservation strategies. This paper introduces a revolutionary air-friction-driven rotating gate transistor that operates without the need for a conventional gate voltage. This new device offers the advantages of wear resistance, a slim and flexible design (achieved through low-temperature solution processing), and a simplified three-layer structure that streamlines manufacturing and reduces potential carbon emissions. This device's wear resistance and ease of fabrication render the device a promising technology with applications in various fields, including electronics, vehicles, aviation, and wearable devices. This study provides evidence of the device's feasibility for use in real-world vehicular scenarios, underscoring its potential for future innovation and widespread adoption.
Keywords: Devices; Electronic engineering; Materials science.
© 2024 The Authors.