Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

Yudi Dai; Junlin Xiong; Yanfeng Ge; Bin Cheng; Lizheng Wang; Pengfei Wang; Zenglin Liu; Shengnan Yan; Cuiwei Zhang; Xianghan Xu; Youguo Shi; Sang-Wook Cheong; Cong Xiao; Shengyuan A Yang; Shi-Jun Liang; Feng Miao

doi:10.1038/s41467-024-45318-8

Interfacial magnetic spin Hall effect in van der Waals Fe₃GeTe₂/MoTe₂ heterostructure

Nat Commun. 2024 Feb 7;15(1):1129. doi: 10.1038/s41467-024-45318-8.

Authors

Yudi Dai^#¹, Junlin Xiong^#¹, Yanfeng Ge^#², Bin Cheng³, Lizheng Wang¹, Pengfei Wang¹, Zenglin Liu¹, Shengnan Yan¹, Cuiwei Zhang⁴, Xianghan Xu⁵, Youguo Shi⁴, Sang-Wook Cheong⁵, Cong Xiao^{6

7

8}, Shengyuan A Yang⁹, Shi-Jun Liang¹⁰, Feng Miao¹¹

Affiliations

¹ National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
² Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore.
³ Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, China. bincheng@njust.edu.cn.
⁴ Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
⁵ Center for Quantum Materials Synthesis and Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ, 08854, USA.
⁶ Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China. congxiao@um.edu.mo.
⁷ Department of Physics, University of Hong Kong, Hong Kong, China. congxiao@um.edu.mo.
⁸ HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China. congxiao@um.edu.mo.
⁹ Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, SAR, China.
¹⁰ National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. sjliang@nju.edu.cn.
¹¹ National Laboratory of Solid State Microstructures, Institute of Brain-Inspired Intelligence, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. miao@nju.edu.cn.

^# Contributed equally.

Abstract

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe₃GeTe₂/MoTe₂ van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Abstract

Grants and funding