Atomic layer deposition of SnS2film on a precursor pre-treated substrate

Jungtae Kim; Dowwook Lee; Jangho Bae; Taeyoon Lee; Hyeongtag Jeon

doi:10.1088/1361-6528/ad2573

Atomic layer deposition of SnS₂film on a precursor pre-treated substrate

Nanotechnology. 2024 Feb 27;35(20). doi: 10.1088/1361-6528/ad2573.

Authors

Jungtae Kim¹, Dowwook Lee², Jangho Bae², Taeyoon Lee¹, Hyeongtag Jeon^{1

2}

Affiliations

¹ Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04673, Republic of Korea.
² Division of Materials Science and Engineering, Hanyang University, Seoul, 04673, Republic of Korea.

PMID: 38306693
DOI: 10.1088/1361-6528/ad2573

Abstract

Two-dimensional (2D) materials are attracting attention because of their outstanding physical, chemical, and electrical properties for applications of various future devices such as back-end-of-line field effect transistor (BEOL FET). Among many 2D materials, tin disulfide (SnS₂) material is advantageous for low temperature process due to low melting point that can be used for flexible devices and back-end-of-line (BEOL) devices that require low processing temperature. However, low temperature synthesis method has a poor crystallinity for applying to various semiconductor industries. Hence, many studies of improving crystallinity of tin disulfide film are studied for enhancing the quality of film. In this work, we propose a precursor multi-dosing method before deposition of SnS₂. This precursor pre-treatment was conducted by atomic layer deposition cycles for more adsorption of precursors to the substrate before deposition. The film quality was analyzed by x-ray diffraction, Raman, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. As a result, more adsorbates by precursor pre-treatment induce higher growth rate and better crystallinity of film.

Keywords: 2D material; SnS2; atomic layer deposition; precursors.