This paper evaluates the non-uniformity degree of platinum and chromium Schottky contacts on silicon carbide. The forward characteristics of experimental samples were acquired in a wide, 60-500 K, temperature range. Microstructural and conventional electrical characterizations were performed, revealing the presence of inhomogeneities on the contact surface. The main parameters were extracted using inhomogeneity models of varying complexity levels. Their relevance is discussed with respect to the models' applicable, limited, temperature ranges. Finally, complete forward curve fitting was achieved using p-diode modeling, evincing that each type of contact behaves as four parallel-connected ideal diodes. Since these parallel diodes have varying influences on the overall device current with temperature and bias, operable domains can be identified where the samples behave suitably.
Keywords: Schottky contact; non-uniformity; p-diode model; silicon carbide.