Fabrication of high quality lead-free double perovskite Cs2AgBiBr6thin film and its application in memristor with ultralow operation voltage

Xiaofang Zhang; Ke Wang; Zhenyu Li; Juanjuan Qi; Dongke Li; Jianqiang Luo; Jian Liu

doi:10.1088/1361-6528/ad2158

Fabrication of high quality lead-free double perovskite Cs₂AgBiBr₆thin film and its application in memristor with ultralow operation voltage

Nanotechnology. 2024 Feb 22;35(19). doi: 10.1088/1361-6528/ad2158.

Authors

Xiaofang Zhang¹, Ke Wang¹, Zhenyu Li¹, Juanjuan Qi¹, Dongke Li², Jianqiang Luo³, Jian Liu¹

Affiliations

¹ School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang, 330013, People's Republic of China.
² Hangzhou Global Scientific and Technological Innovation Center, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 311200, People's Republic of China.
³ School of Chemistry, Biology and Materials Science, East China University of Technology, Nanchang, 330013, People's Republic of China.

PMID: 38253005
DOI: 10.1088/1361-6528/ad2158

Abstract

Recently, the lead-free double perovskite Cs₂AgBiBr₆has been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite Cs₂AgBiBr₆thin films without pinholes and particles by applying a low-pressure assisted method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite Cs₂AgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in dimethyl sulfoxide (DMSO) solvents. Furthermore, the grain size of the Cs₂AgBiBr₆films can be significantly increased by increasing the post-annealing temperature. Finally, a sandwiched structure memristor with an ITO/Cs₂AgBiBr₆/Ta configuration was successfully demonstrated, featuring ultralow operation voltage (V_Set∼ 57 ± 23 mV,V_Reset∼ -692 ± 68 mV) and satisfactory memory window (the ratio ofR_HRS/R_LRS∼ 10 times), which makes it suitable for low-power consumption information storage devices.

Keywords: Cs2AgBiBr6; double perovskite; memristor; ultralow operation voltage.