Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits have broad application prospects in large-scale flexible electronics. To simplify circuit design and increase integration density, basic complementary circuits require both p- and n-channel transistors based on an individual semiconductor. However, until now, no MOSs that can simultaneously show p- and n-type conduction behavior have been reported. Herein, we demonstrate for the first time that Cu-doped SnO (Cu:SnO) with HfO2 capping can be employed for high-performance p- and n-channel TFTs. The interstitial Cu+ can induce an n-doping effect while restraining electron-electron scatterings by removing conduction band minimum degeneracy. As a result, the Cu3 atom %:SnO TFTs exhibit a record high electron mobility of 43.8 cm2 V-1 s-1. Meanwhile, the p-channel devices show an ultrahigh hole mobility of 2.4 cm2 V-1 s-1. Flexible complementary logics are then established, including an inverter, NAND gates, and NOR gates. Impressively, the inverter exhibits an ultrahigh gain of 302.4 and excellent operational stability and bending reliability.
Keywords: Cu doping; SnO; flexible complementary logics; metal oxide semiconductor.