Effects of electric field and light on resistivity switching of Eu0.7Sr0.3MnO3 thin films

Ming Zheng; Yixiao Zhang; Shengnan Wang; Jian Yang; Pengfei Guan; Baojing Zhang; Heliang Fan; Shiguang Yan; Hao Ni; Chang Yang

doi:10.1039/d3cp05256g

Effects of electric field and light on resistivity switching of Eu_0.7Sr_0.3MnO₃ thin films

Phys Chem Chem Phys. 2024 Feb 7;26(6):4968-4974. doi: 10.1039/d3cp05256g.

Authors

Ming Zheng^{1

2

3}, Yixiao Zhang¹, Shengnan Wang⁴, Jian Yang¹, Pengfei Guan¹, Baojing Zhang¹, Heliang Fan¹, Shiguang Yan², Hao Ni⁴, Chang Yang⁵

Affiliations

¹ School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China. zhengm@mail.ustc.edu.cn.
² Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
³ Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China.
⁴ College of Science, China University of Petroleum (East China), Qingdao 266580, China.
⁵ Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, and Department of Electronics, East China Normal University, Shanghai, 200241, China.

PMID: 38230694
DOI: 10.1039/d3cp05256g

Abstract

Based on the excellent piezoelectric properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) single crystals, a hole-doped manganite film/PMN-PT heterostructure has been constructed to achieve electric-field and light co-control of physical properties. Here, we report the resistivity switching behavior of Eu_0.7Sr_0.3MnO₃/PMN-PT(111) multiferroic heterostructures under different in-plane reading currents, temperatures, light stimuli and electric fields, and discuss the underlying coupling mechanisms of resistivity change. The transition from the electric-field induced lattice strain effect to polarization current effect can be controlled effectively by decreasing the in-plane reading current at room temperature. With the decrease of temperature, the interfacial charge effect dominates over the lattice strain effect due to the reduced charge carrier density. In addition, light stimulus can lead to the delocalization of e_g carriers, and thus enhance the lattice strain effect and suppress the interfacial charge effect. This work helps to understand essential physics of magnetoelectric coupling and also provides a potential method to realize energy-efficient multi-field control of manganite thin films.