Enhancement of efficiency in CsSnI3 based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Sagar Bhattarai; M Khalid Hossain; Rahul Pandey; Jaya Madan; D P Samajdar; Mithun Chowdhury; Md Ferdous Rahman; Mohd Zahid Ansari; Munirah D Albaqami

doi:10.1016/j.heliyon.2024.e24107

Enhancement of efficiency in CsSnI₃ based perovskite solar cell by numerical modeling of graphene oxide as HTL and ZnMgO as ETL

Heliyon. 2024 Jan 4;10(1):e24107. doi: 10.1016/j.heliyon.2024.e24107. eCollection 2024 Jan 15.

Authors

Sagar Bhattarai¹, M Khalid Hossain², Rahul Pandey³, Jaya Madan³, D P Samajdar⁴, Mithun Chowdhury⁵, Md Ferdous Rahman⁵, Mohd Zahid Ansari⁶, Munirah D Albaqami⁷

Affiliations

¹ Technology Innovation and Development Foundation, Indian Institute of Technology Guwahati, Guwahati, 781039, Assam, India.
² Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, Bangladesh.
³ VLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab, 140401, India.
⁴ Department of ECE, Indian Institute of Information Technology Design and Manufacturing, Madhya Pradesh, 482005, India.
⁵ Advanced Energy Materials and Solar Cell Research Laboratory, Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, 5400, Bangladesh.
⁶ School of Materials Science and Engineering, Yeungnam University, Gyeongbuk, 38541, Republic of Korea.
⁷ Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia.

Abstract

Perovskite photovoltaics have an immense contribution toward the all-round development of the solar cell. Apart from the flexibility, stability, and high efficiency, more stress has been given to using lead-free as well as eco-friendly, inexpensive materials in the fabrication of PSC devices. The utilization of non-volatile material, such as cesium tin iodide (CsSnI₃), can be proposed for designing the PSC device, which not only makes it eco-friendly but also offers better optoelectronic characteristics due to its smaller bandgap of 1.27 eV. The inclusion of Sn in the perovskite material also functions as an increment in the stability of the perovskite. In the present simulation, CsSnI₃ is used as an active absorber layer while the ZnMgO is used as an ETL for a cost-effective nature. Similarly, graphene oxide (GO) is used as HTL for a superior collection of holes. The comprehensive numerical modeling of the ZnMgO can be utilized in solar cell designing with appropriate CsSnI₃ thickness, working temperature, total defectivity, and resistance impact, respectively. The presently simulated device offers an excellent efficiency of 17.37 % with CsSnI₃-based PSC. These results of the study also show an effective route to develop highly efficient lead-free PSC devices.

Keywords: CsSnI3 absorber; Graphene oxide HTL; Perovskite solar cells; SCAPS-1D; ZnMgO ETL.