Three-dimensional integration of two-dimensional field-effect transistors

Darsith Jayachandran; Rahul Pendurthi; Muhtasim Ul Karim Sadaf; Najam U Sakib; Andrew Pannone; Chen Chen; Ying Han; Nicholas Trainor; Shalini Kumari; Thomas V Mc Knight; Joan M Redwing; Yang Yang; Saptarshi Das

doi:10.1038/s41586-023-06860-5

Three-dimensional integration of two-dimensional field-effect transistors

Nature. 2024 Jan;625(7994):276-281. doi: 10.1038/s41586-023-06860-5. Epub 2024 Jan 10.

Authors

Darsith Jayachandran^#¹, Rahul Pendurthi^#², Muhtasim Ul Karim Sadaf³, Najam U Sakib³, Andrew Pannone³, Chen Chen⁴, Ying Han³, Nicholas Trainor^{4

5}, Shalini Kumari^{4

5}, Thomas V Mc Knight^{4

5}, Joan M Redwing^{4

5

6}, Yang Yang^{3

6

7}, Saptarshi Das^{8

9

10

11}

Affiliations

¹ Engineering Science and Mechanics, Penn State University, University Park, PA, USA. darsith6@gmail.com.
² Engineering Science and Mechanics, Penn State University, University Park, PA, USA. rahulpendurthi001@gmail.com.
³ Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
⁴ 2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA.
⁵ Materials Science and Engineering, Penn State University, University Park, PA, USA.
⁶ Materials Research Institute, Penn State University, University Park, PA, USA.
⁷ Nuclear Engineering, Penn State University, University Park, PA, USA.
⁸ Engineering Science and Mechanics, Penn State University, University Park, PA, USA. sud70@psu.edu.
⁹ Materials Science and Engineering, Penn State University, University Park, PA, USA. sud70@psu.edu.
¹⁰ Materials Research Institute, Penn State University, University Park, PA, USA. sud70@psu.edu.
¹¹ Electrical Engineering, Penn State University, University Park, PA, USA. sud70@psu.edu.

^# Contributed equally.

PMID: 38200300
DOI: 10.1038/s41586-023-06860-5

Abstract

In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'¹ but also introduces multifunctionalities for 'More than Moore'² technologies. Although silicon-based 3D integrated circuits are commercially available^3-5, there is limited effort on 3D integration of emerging nanomaterials^6,7 such as two-dimensional (2D) materials despite their unique functionalities^7-10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS₂ with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS₂ and WSe₂ with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS₂ FETs (channel length, L_CH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.