Magnetocapacitance at the Ni/BiInO3 Schottky Interface

Gauthami Viswan; Kun Wang; Robert Streubel; Xia Hong; Nagarajan Valanoor; Daniel Sando; Peter A Dowben

doi:10.1021/acsami.3c13478

Magnetocapacitance at the Ni/BiInO₃ Schottky Interface

ACS Appl Mater Interfaces. 2024 Jan 24;16(3):4108-4116. doi: 10.1021/acsami.3c13478. Epub 2024 Jan 9.

Authors

Gauthami Viswan¹, Kun Wang¹, Robert Streubel¹, Xia Hong¹, Nagarajan Valanoor², Daniel Sando^{2

3}, Peter A Dowben¹

Affiliations

¹ Department of Physics and Astronomy, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Street, Lincoln, Nebraska 68588-0299, United States.
² School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia.
³ School of Physical and Chemical Sciences, Te Kura Matu̅ University of Canterbury, Christchurch 8140, New Zealand.

PMID: 38193781
DOI: 10.1021/acsami.3c13478

Abstract

We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO₃ thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO₃ interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO₃, corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO₃/(Ba,Sr)RuO₃/NdScO₃(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO₃ interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.

Keywords: BiInO3; Bi−Ni alloy formation; XPS; bismuth-based perovskites; magnetocapacitance; spin-polarized charge accumulation.