High- Tc Ferromagnetic Semiconductor in Thinned 3D Ising Ferromagnetic Metal Fe3GaTe2

Nano Lett. 2024 Jan 24;24(3):993-1000. doi: 10.1021/acs.nanolett.3c04462. Epub 2024 Jan 8.

Abstract

Emergent phenomena in exfoliated layered transition metal compounds have attracted much attention in the past several years. Especially, pursuing a ferromagnetic insulator is one of the exciting goals for stimulating a high-performance magnetoelectrical device. Here, we report the transition from a metallic to high-Tc semiconductor-like ferromagnet in thinned Fe3GaTe2, accompanied with competition among various magnetic interactions. As evidenced by critical exponents, Fe3GaTe2 is the first layered ferromagnet described by a 3D Ising model coupled with long-range interactions. An extra magnetic phase from competition between ferromagnetism and antiferromagnetism emerges at a low field below Tc. Upon reducing thickness, the Curie temperature (Tc) monotonically decreases from 342 K for bulk to 200 K for 1-3 nm flakes, which is the highest Tc reported as far as we know. Furthermore, a semiconductor-like behavior has been observed in such 1-3 nm flakes. Our results highlight the importance of Fe3GaTe2 in searching for ferromagnetic insulators, which may benefit spintronic device fabrication.

Keywords: 3D Ising magnetism; anomalous Hall effect; critical behavior; scaling analysis; van der Waals ferromagnets.