We draw comparisons between the ablation and damage mechanisms that occur for both film and substrate irradiation using atomic force microscopy, scanning electron microscopy, and pump-probe reflectometry. For substrate irradiation, energy absorbed at the film-substrate interface creates a confined energy situation, resulting in a photomechanical lift-off. A partial ablation at the edges of the ablated zone formed the burr and was reduced in height by minimizing the area subject to the partial ablation threshold fluence. Substrate damage is understood to arise from free electron diffusion from indium tin oxide and subsequent laser heating. We establish a process window for substrate irradiation in a single-pulse ablation regime between approximately two to three times the ablation threshold of 0.18 J/cm2, validating the process window seen in literature and provide a crucial understanding for the ablation mechanisms of transparent conductive films.