Self-powered semitransparent WS2/LaVO3vertical-heterostructure photodetectors by employing interfacial hexagonal boron nitride

Da Hee Kim; Dong Hee Shin; Hosun Lee

doi:10.1088/1361-6528/ad1945

Self-powered semitransparent WS₂/LaVO₃vertical-heterostructure photodetectors by employing interfacial hexagonal boron nitride

Nanotechnology. 2024 Jan 24;35(15). doi: 10.1088/1361-6528/ad1945.

Authors

Da Hee Kim^{1

2}, Dong Hee Shin³, Hosun Lee^{1

2}

Affiliations

¹ Department of Applied Physics, Kyung Hee University, Yongin 17104, Republic of Korea.
² Education Institute for Frontier, Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea.
³ Department of Smart Sensors Engineering, Andong National University, Andong, Gyeongbuk, 36729, Republic of Korea.

PMID: 38154129
DOI: 10.1088/1361-6528/ad1945

Abstract

Two-dimensional (2D) semiconductor and LaVO₃materials with high absorption coefficients in the visible light region are attractive structures for high-performance photodetector (PD) applications. Insulating 2D hexagonal boron nitride (h-BN) with a large band gap and excellent transmittance is a very attractive material as an interface between 2D/semiconductor heterostructures. We first introduce WS₂/h-BN/LaVO₃semitransparent PD. The photo-current/dark current ratio of the device exhibits a delta-function characteristic of 4 × 10⁵at 0 V, meaning 'self-powered'. The WS₂/h-BN/LaVO₃PD shows up to 0.27 A W^-1responsivity (R) and 4.6 × 10¹⁰cm Hz^1/2W^-1detectivity (D*) at 730 nm. Especially, it was confirmed that theD* performance improved by about 5 times compared to the WS₂/LaVO₃device at zero bias. Additionally, it is suggested that the PD maintains 87% of its initialRfor 2000 h under the atmosphere with a temperature of 25 °C and humidity of 30%. Based on the above results, we suggest that the WS₂/h-BN/LaVO₃heterojunction is promising as a self-powered optoelectronic device.

Keywords: LaVO3; WS2; broadband; h-BN; interfacial layer; photodetector; self-powered.