The flexible electronics have application prospects in many fields, including as wearable devices and in structural detection. Spintronics possess the merits of a fast response and high integration density, opening up possibilities for various applications. However, the integration of miniaturization on flexible substrates is impeded inevitably due to the high Joule heat from high current density (1012 A/m2). In this study, a prototype flexible spintronic with device antiferromagnetic/ferromagnetic heterojunctions is proposed. The interlayer coupling strength can be obviously altered by sunlight soaking via direct photo-induced electron doping. With the assistance of a small magnetic field (±125 Oe), the almost 180° flip of magnetization is realized. Furthermore, the magnetoresistance changes (15~29%) of flexible spintronics on fingers receiving light illumination are achieved successfully, exhibiting the wearable application potential. Our findings develop flexible spintronic sensors, expanding the vision for the novel generation of photovoltaic/spintronic devices.
Keywords: SAF heterostructure; flexible magnetoresistance sensor; photo-induced electrons; photovoltaic spintronics.