Nanoresonators are powerful and versatile tools promising to revolutionize a wide range of technological areas by delivering unparalleled performance in physical, chemical, biological sensing, signal and information processing, quantum computation, etc., via their high-frequency resonant vibration and rich dynamic behavior. Having the ability to tune the resonance frequency and dynamic behavior at the application stage promises further improvement in their effectiveness and enables novel applications. However, achieving significant room-temperature tunability in conventional (monolithically fabricated) nanoresonators is considered challenging. Here we demonstrate ultrawide electrostatic tuning (∼70%) of (initial) resonance-frequency (∼7% V-1) at room temperature in a monolithically fabricated ultrathin Si nanoresonator (width ∼ 40 nm, length ∼ 200 μm) device. Extreme electrostatic tuning of nonlinear behavior is also demonstrated by canceling the cubic-nonlinear coefficient and subsequently flipping its sign. Thus, these results are expected to provide remarkable operational flexibility and new capabilities to microfabricated resonators, which will benefit many technological areas.
Keywords: Electron beam lithography; Gate-tuning; Nano Electro-Mechanical Systems; Nanomechanical resonator; Resonance frequency.