In GaN-based vertical micro LEDs, conventional metal n-contacts on the N face n-GaN suffer from a low aperture ratio due to the high reflection of metals, resulting in low-light extraction efficiencies. Great efforts have been devoted to enhancing transparency by employing transparent conducting oxides for n-contacts, but they exhibited poor Ohmic behavior due to their large work functions. Herein, we introduce an InN/ITO n-contact to achieve both superior contact property and high transparency. At the initial stage, the ITO with thin In interlayer was utilized, and the change in contact properties was observed with different annealing temperatures in the N2 atmosphere. After annealing at 200 °C, the In/ITO n-contact exhibited Ohmic behavior with high a transparency of 74% in the blue wavelength region. The metallic In transformed into InN during the annealing process, as confirmed by transmission electron microscopy. The formation of InN caused polarization-induced band bending at the InN/GaN interface, providing evidence of enhanced Ohmic properties. In the application of vertical GaN µLED, the EQE increased from 6.59% to 11.5% while operating at 50 A/cm2 after the annealing process.