Solution-processed bilayer InGaZnO/In2O3thin film transistors at low temperature by lightwave annealing

Qian Zhang; Guodong Xia; Hangyu Li; Qiang Sun; Hongyu Gong; Sumei Wang

doi:10.1088/1361-6528/ad14b5

Solution-processed bilayer InGaZnO/In₂O₃thin film transistors at low temperature by lightwave annealing

Nanotechnology. 2024 Jan 4;35(12). doi: 10.1088/1361-6528/ad14b5.

Authors

Qian Zhang¹, Guodong Xia², Hangyu Li³, Qiang Sun³, Hongyu Gong³, Sumei Wang³

Affiliations

¹ School of Information Engineering, Hebei GEO University, Shijiazhuang 050031, People's Republic of China.
² Department of Material and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China.
³ Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China.

PMID: 38086071
DOI: 10.1088/1361-6528/ad14b5

Abstract

At low temperatures about 230 °C, bilayer InGaZnO/In₂O₃thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In₂O₃bilayer TFTs with SiO₂as dielectric layer show high electrical performances, such as a mobility of 7.63 cm²V^-1s^-1, a threshold voltage (V_th) of 3.8 V, and an on/off ratio higher than 10⁷, which are superior to single-layer InGaZnO TFTs or In₂O₃TFTs. Moreover, bilayer InGaZnO/In₂O₃TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In₂O₃layer. By using high dielectric constant AlO_xfilm, the InGaZnO/In₂O₃TFTs exhibit an improved mobility of 47.7 cm²V^-1s^-1. The excellent electrical performance of the solution-based InGaZnO/In₂O₃TFTs shows great application potential for low-cost flexible printed electronics.

Keywords: bilayer structure; low temperature; solution process; thin film transistor.