This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology. The CDTI transfer register offers a charge transfer inefficiency lower than 10-4 and a low dark current o 0.11nA/cm2 at room temperature. In this work, the timing diagram is adapted to use this CDTI transfer register in an electron multiplication mode. The results highlight some limitations of this device in such an EM configuration: for instance, an unexpected increase in the dark current is observed. A design modification is then proposed to overcome these limitations and rely on the addition of an electrode on the top of the register. Thus, this new device preserves the good transfer performance of the register while adding an electron multiplication function. Technology computer-aided design (TCAD) simulations in 2D and 3D are performed with this new design and reveal a very promising structure.
Keywords: CMOS; CMOS image sensors; Charge Coupled Device (CCD); EMCCD; electron multiplication; image sensors.