Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

Niharika Gupta; Shu Wang; Naoki Higashitarumizu; Vivian Wang; Kyuho Lee; Cheolmin Park; Ali Javey

doi:10.1126/sciadv.adi9384

Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

Sci Adv. 2023 Dec 8;9(49):eadi9384. doi: 10.1126/sciadv.adi9384. Epub 2023 Dec 8.

Authors

Niharika Gupta^{1

2}, Shu Wang^{2

3}, Naoki Higashitarumizu^{1

2}, Vivian Wang^{1

2}, Kyuho Lee^{1

2

4}, Cheolmin Park⁴, Ali Javey^{1

2}

Affiliations

¹ Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
² Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
³ Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
⁴ Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

Abstract

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)-based MWIR light emitters and detectors have been shown to outperform the state-of-the-art for commercial devices due to the low Auger recombination coefficient of bP. However, the scalability of these devices remains a challenge. Here, we report a bP ink formula that preserves the exceptional MWIR optoelectronic properties of bP to deposit centimeter-scale, uniform, and pinhole free films with a photoluminescence quantum yield higher than competing III-V and II-VI semiconductors with similar bandgaps at high excitation regime. As a proof of concept, we use bP ink as a "phosphor" on a red commercial light-emitting diode to demonstrate bright MWIR light emission. We also show that these films can be integrated into heterostructure device architectures with electron and hole selective contacts for direct-injected light emission and detection in MWIR.