One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

Makoto Tozawa; Chie Miyamae; Kazutaka Akiyoshi; Tatsuya Kameyama; Takahisa Yamamoto; Genichi Motomura; Yoshihide Fujisaki; Taro Uematsu; Susumu Kuwabata; Tsukasa Torimoto

doi:10.1039/d3na00755c

One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga₂O₃ matrix and enhancement of band-edge emission by Na⁺ doping

Nanoscale Adv. 2023 Nov 14;5(24):7057-7066. doi: 10.1039/d3na00755c. eCollection 2023 Dec 5.

Authors

Affiliations

¹ Graduate School of Engineering, Nagoya University Chikusa-ku Nagoya 464-8603 Japan torimoto@chembio.nagoya-u.ac.jp.
² Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK) 1-10-11 Kinuta, Setagaya-ku Tokyo 157-8510 Japan.
³ Department of Applied Chemistry, Graduate School of Engineering, Osaka University Suita Osaka 565-0871 Japan.
⁴ Innovative Catalysis Science Division, Institute for Open and Transdisciplinary Research Initiatives (ICS-OTRI), Osaka University Suita Osaka 565-0871 Japan.

Abstract

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga₂O₃ matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na⁺ doping, 29%. The obtained Na-doped AIGS/Ga₂O₃ composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.