Electromagnetically induced absorption (EIA) exhibits abnormal dispersion and novel fast-light features, making it a crucial aspect of nanophotonics. Here, the EIA phenomenon is numerically predicted in a compact plasmonic waveguide system by introducing a slot resonator above a square cavity. Simulation results reveal that the EIA response can be easily tuned by altering the structure's parameters, and double EIA valleys can be observed with an additional slot resonator. Furthermore, the investigated structures demonstrate a fast-light effect with an optical delay of ∼ -1.0 ps as a result of aberrant dispersion at the EIA valley, which enable promising applications in the on-chip fast-light area. Finally, a plasmonic nanosensor with a sensitivity of ∼1200 nm/RIU and figure of merit of ∼16600 is achieved based on Fano resonance. The special features of our suggested structure are applicable in realization of various integrated components for the development of multifunctional high-performance nano-photonic devices.