Infrared image sensing technology has received widespread attention due to its advantages of not being affected by the environment, good target recognition, and high anti-interference ability. However, with the improvement of the integration of the infrared focal plane, the dynamic range of the photoelectric system is difficult to improve, that is, the restrictive trade-off between noise and full well capacity is particularly prominent. Since the capacitance of the inversion MOS capacitor changes with the gate-source voltage adaptively, the inversion MOS capacitor is used as the capacitor in the infrared pixel circuit, which can solve the contradiction between noise in low light and full well capacity in high light. To this end, a highly dynamic pixel structure based on adaptive capacitance is proposed, so that the capacitance of the infrared image sensor can automatically change from 6.5 fF to 37.5 fF as the light intensity increases. And based on 55 nm CMOS process technology, the performance parameters of an infrared image sensor with a 12,288 × 12,288 pixel array are studied. The research results show that a small-size pixel of 5.5 µm × 5.5 µm has a large full well capacity of 1.31 Me- and a variable conversion gain, with a noise of less than 0.43 e- and a dynamic range of more than 130 dB.
Keywords: CMOS infrared image sensor; adaptive capacitance; high dynamic range; large full well capacity.