Ni90%Cr10% and Ni97%Si3% thin-film thermocouples (TFTCs) were fabricated on a silicon substrate using magnetron sputtering technology. Static calibration yielded a Seebeck coefficient of 23.00 μV/°C. During staged temperature elevation of the TFTCs while continuously monitoring their thermoelectric output, a rapid decline in thermoelectric potential was observed upon the hot junction reaching 600 °C; the device had failed. Through three cycles of repetitive static calibration tests ranging from room temperature to 500 °C, it was observed that the thermoelectric performance of the TFTCs deteriorated as the testing progressed. Utilizing the same methodology, Ni-Cr and Ni-Si thin films corresponding to the positive and negative electrodes of the TFTCs were prepared. Their resistivity after undergoing various temperature annealing treatments was measured. Additionally, their surfaces were characterized using Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). The causes behind the decline in thermoelectric performance at elevated temperatures were analyzed from both chemical composition and microstructural perspectives.
Keywords: NiCr/NiSi TFTCs; failure analysis; transient temperature measurement.