The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimensional electron sea. The proposed device is investigated using the Silvaco simulation tool, which has been calibrated against experimental data. Numerical simulations prove that the proposed device has a very high on-state current above 3 A/mm, while the breakdown voltage (above 800 V) is not significantly affected. The calculated Johnson's and Baliga's figure-of-merits highlight the promise of using such a coherent channel for enhancing the performance of GaN HEMTs in power electronics applications.
Keywords: GaN; HEMT; coherent channel; figure of merit.