In the present study, the V2O5 films synthesized by plasma-enhanced atomic layer deposition on p-Si and fluorinated graphene on Si (or FG/Si) substrates were analyzed for memristive applications. A number of samples were grown with V2O5 films with an average thickness of 1.0-10.0 nm, as determined by ellipsometric measurements. The study of surface morphology by atomic force microscopy showed that an island growth occurs in the initial stages of the film growth. The Raman spectra of the synthesized V2O5 films with an average thickness of more than 2.0 nm on the SiO2/Si substrates exhibit six distinct modes typical of the orthorhombic V2O5 phase. A large hysteresis was found in the C-V characteristics of the V2O5 films with a thickness of 1.0-4.2 nm. In general, the built-in charge in the V2O5 layers with an average thickness of 1.0-4.0 nm is positive and has a value of about ∼(2-8) × 1011 cm-2 at the 1 MHz frequency. Increasing the V2O5 film thickness leads to the accumulation of negative built-in charge up to -(1.7 to 2.3) × 1011 cm-2 at the 1 MHz frequency. The temperature dependence of the conductivity exhibits different electrically active states in V2O5/Si and V2O5/FG/Si structures. Thus, the FG layer can modify these states. V2O5 layers with an average film thickness of 1.0-3.6 nm demonstrate the memristive switching with an ON/OFF ratio of ∼1-4 orders of magnitude. At film thicknesses above 5.0 nm, the memristive switching practically vanishes. V2O5 films with an average thickness of 3.6 nm were found to be particularly stable and promising for memristive switching applications.